2SC3930W [BL Galaxy Electrical]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | 2SC3930W |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC3930W
FEATURES
Pb
Lead-free
z
High transition frequency fT.
Optimum for RF amplification of
FM/AM radios.
z
z
For high-frequency amplification complementary
to 2SA1532.
APPLICATIONS
z
Audio frequency general purpose amplifier.
SOT-323
ORDERING INFORMATION
Type No.
Marking
VB/VC
Package Code
SOT-323
2SC3930W
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
20
5
V
V
Collector Current -Continuous
Collector Dissipation
30
150
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTF036
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC3930W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
30
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=100μA,IB=0
20
5
V
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
ICBO
IE=100μA,IC=0
VCB=10V,IE=0
VEB=5V,IC=0
0.1
0.1
220
μA
μA
IEBO
hFE
VCE=10V,IC=1mA
70
VCE=10V, IE= 1mA
f=200MHz
Transition frequency
fT
150
MHz
pF
Common emitter reverse transfer
capacitance
VCE=10V, IE= 1mA
f=10.7MHz
Cre
NF
Zrb
1.5
4
Noise figure
VCB=10V,IC=1mA,f=5MHz
VCB=10V,IC=1mA,f=2MHz
dB
Ω
Reverse transfer impedance
50
CLASSIFICANTION OF hFE
Marking
hFE
VB
VC
110-220
70-140
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF036
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC3930W
Document number: BL/SSSTF036
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC3930W
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
A
Min
1.8
Max
2.2
B
1.15
1.35
C
D
E
1.0Typical
0.15
0.25
1.2
0.35
0.40
1.4
G
H
J
0.02
0.1
0.1Typical
K
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
2SC3930W
SOT-323
3000/Tape&Reel
Document number: BL/SSSTF036
Rev.A
www.galaxycn.com
4
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